Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer
DC Field | Value | Language |
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dc.contributor.author | Yang, Hee Yeon | - |
dc.contributor.author | Yun, Dong Yeol | - |
dc.contributor.author | Kim, Yu Na | - |
dc.contributor.author | Hong, Jae-Min | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T17:31:22Z | - |
dc.date.available | 2021-08-02T17:31:22Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24013 | - |
dc.description.abstract | Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1166/jnn.2016.11967 | - |
dc.identifier.scopusid | 2-s2.0-84959422546 | - |
dc.identifier.wosid | 000372358800075 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1685 - 1688 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1685 | - |
dc.citation.endPage | 1688 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SENSITIZED SOLAR-CELLS | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | COATINGS | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordAuthor | Nonvolatile Memory Device | - |
dc.subject.keywordAuthor | Polydopamine | - |
dc.subject.keywordAuthor | Switching Mechanism | - |
dc.subject.keywordAuthor | Capacitance-Voltage | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000002/art00076 | - |
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