Reversible and Irreversible Responses of Defect-Engineered Graphene-Based Electrolyte-Gated pH Sensors
DC Field | Value | Language |
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dc.contributor.author | Kwon, Sun Sang | - |
dc.contributor.author | Yi, Jaeseok | - |
dc.contributor.author | Lee, Won Woo | - |
dc.contributor.author | Shin, Jae Hyeok | - |
dc.contributor.author | Kim, Su Han | - |
dc.contributor.author | Cho, Seunghee H. | - |
dc.contributor.author | Nam, SungWoo | - |
dc.contributor.author | Park, Won Il | - |
dc.date.accessioned | 2021-08-02T17:38:08Z | - |
dc.date.available | 2021-08-02T17:38:08Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24107 | - |
dc.description.abstract | We have studied the role of defects in electrolyte-gated graphene mesh (GM) field-effect transistors (FETs) by introducing engineered edge defects in graphene (Gr) channels. Compared with Gr-FETs, GM-FETs were characterized as having large increments of Dirac point shift (similar to 30-100 mV/pH) that even sometimes exceeded the Nernst limit (59 mV/pH) by means of electrostatic gating of H+ ions. This feature was attributed to the defect-mediated chemisorptions of H+ ions to the graphene edge, as supported by Raman measurements and observed cycling characteristics of the GM FETs. Although the H+ ion binding to the defects increased the device response to pH change, this binding was found to be irreversible. However, the irreversible component showed relatively fast decay, almost disappearing after 5 cycles of exposure to solutions of decreasing pH value from 8.25 to 6.55. Similar behavior could be found in the Gr-FET, but the irreversible component of the response was much smaller. Finally, after complete passivation of the defects, both Gr-FETs and GM-FETs exhibited only reversible response to pH change, with similar magnitude in the range of 68 mV/pH. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Reversible and Irreversible Responses of Defect-Engineered Graphene-Based Electrolyte-Gated pH Sensors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Won Il | - |
dc.identifier.doi | 10.1021/acsami.5b10183 | - |
dc.identifier.scopusid | 2-s2.0-84954406638 | - |
dc.identifier.wosid | 000368563000099 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.1, pp.834 - 839 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 834 | - |
dc.citation.endPage | 839 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | BIOSENSORS | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | graphene mesh | - |
dc.subject.keywordAuthor | electrolyte-gated field effect transistor | - |
dc.subject.keywordAuthor | pH sensor | - |
dc.subject.keywordAuthor | nanosensor | - |
dc.subject.keywordAuthor | defect-mediated chemisorption | - |
dc.subject.keywordAuthor | defect passivation | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.5b10183 | - |
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