Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers
DC Field | Value | Language |
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dc.contributor.author | Kim, Woo Kyum | - |
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Lee, Dea Uk | - |
dc.contributor.author | Kim, Hyoun Woo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-07-30T04:58:29Z | - |
dc.date.available | 2021-07-30T04:58:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2450 | - |
dc.description.abstract | Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 x 10(4), which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 x 10(2) cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The "erase" voltages were distributed between 2.3 and 3V, and the "write" voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 x 10(4) s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyoun Woo | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.08.105 | - |
dc.identifier.scopusid | 2-s2.0-85028643690 | - |
dc.identifier.wosid | 000415228700035 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.429, pp.231 - 236 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 429 | - |
dc.citation.startPage | 231 | - |
dc.citation.endPage | 236 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NONVOLATILE REWRITABLE MEMORY | - |
dc.subject.keywordPlus | CONJUGATED-POLYMER | - |
dc.subject.keywordPlus | ORGANIC/INORGANIC NANOCOMPOSITES | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordAuthor | Graphene oxide | - |
dc.subject.keywordAuthor | Mica | - |
dc.subject.keywordAuthor | PVK | - |
dc.subject.keywordAuthor | Nanocomposite | - |
dc.subject.keywordAuthor | Organic bistable device | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433217324522?via%3Dihub | - |
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