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New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

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dc.contributor.authorShon, Yoon-
dc.contributor.authorLee, J. W.-
dc.contributor.authorLee, D. J.-
dc.contributor.authorYoon, I. T.-
dc.contributor.authorKwon, Y. H.-
dc.contributor.authorKim, H. S.-
dc.contributor.authorKang, T. W.-
dc.contributor.authorKyhm, J. H.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorKoo, H. C.-
dc.contributor.authorFu, D. J.-
dc.contributor.authorPark, C. S.-
dc.contributor.authorAn, H. H.-
dc.contributor.authorYoon, Chong S.-
dc.contributor.authorKim, E. K.-
dc.date.accessioned2021-08-02T18:29:03Z-
dc.date.available2021-08-02T18:29:03Z-
dc.date.created2021-05-12-
dc.date.issued2014-10-
dc.identifier.issn0022-2313-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/25759-
dc.description.abstractInCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.titleNew optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr-
dc.typeArticle-
dc.contributor.affiliatedAuthorYoon, Chong S.-
dc.contributor.affiliatedAuthorKim, E. K.-
dc.identifier.doi10.1016/j.jlumin.2014.06.011-
dc.identifier.scopusid2-s2.0-84903695210-
dc.identifier.wosid000340687600093-
dc.identifier.bibliographicCitationJOURNAL OF LUMINESCENCE, v.154, pp.593 - 596-
dc.relation.isPartOfJOURNAL OF LUMINESCENCE-
dc.citation.titleJOURNAL OF LUMINESCENCE-
dc.citation.volume154-
dc.citation.startPage593-
dc.citation.endPage596-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaOptics-
dc.relation.journalWebOfScienceCategoryOptics-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusINP-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusMN-
dc.subject.keywordAuthorPhotoluminescence-
dc.subject.keywordAuthorCr-implantation-
dc.subject.keywordAuthorP-type InCrP:Zn-
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서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

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