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Effect of Misfit Dislocations in Junctions and Base Thickness on Latch-up Characteristics in Two-Terminal Vertical Thyristor-Based Capacitorless Memory

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dc.contributor.author김은규-
dc.date.accessioned2021-08-02T18:36:02Z-
dc.date.available2021-08-02T18:36:02Z-
dc.date.created2021-06-30-
dc.date.issued2018-10-02-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/26314-
dc.publisherAiMES Committee-
dc.titleEffect of Misfit Dislocations in Junctions and Base Thickness on Latch-up Characteristics in Two-Terminal Vertical Thyristor-Based Capacitorless Memory-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitationAmericas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018-
dc.relation.isPartOfAmericas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018-
dc.citation.titleAmericas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018-
dc.citation.conferencePlaceCancun Mexico-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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