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Effect of Misfit Dislocations in Junctions and Base Thickness on Latch-up Characteristics in Two-Terminal Vertical Thyristor-Based Capacitorless Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-02T18:36:02Z | - |
| dc.date.available | 2021-08-02T18:36:02Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2018-10-02 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/26314 | - |
| dc.publisher | AiMES Committee | - |
| dc.title | Effect of Misfit Dislocations in Junctions and Base Thickness on Latch-up Characteristics in Two-Terminal Vertical Thyristor-Based Capacitorless Memory | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018 | - |
| dc.relation.isPartOf | Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018 | - |
| dc.citation.title | Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018 | - |
| dc.citation.conferencePlace | Cancun Mexico | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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