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ALD trend and its application to gate spacer and charge trap layer

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dc.contributor.author전형탁-
dc.date.accessioned2021-08-02T18:36:19Z-
dc.date.available2021-08-02T18:36:19Z-
dc.date.issued2018-09-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/26361-
dc.titleALD trend and its application to gate spacer and charge trap layer-
dc.typeConference-
dc.citation.conferenceNameThe 79th JSAP Autumn Meeting, 2018-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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