Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Abstract

Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH3NH3PbBr3 (MAPbBr(3) ) perovskite layer. The nanocrystalline MAPbBr(3) perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr(3) perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr(3)/Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr(3) perovskite was as large as 3.6 x 10(6). The memristive devices showed high device-to-device reproducibility with set-voltage distributions between -0.5 and -0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1 x 10(4) s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr(3) perovskite.