Nitrogen-doped ZnO shells: Studies on optical transparency and electrical conductivity
DC Field | Value | Language |
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dc.contributor.author | Gaikwad, Rajendra S. | - |
dc.contributor.author | Mane, Rajaram S. | - |
dc.contributor.author | Pawar, Bhagwat N. | - |
dc.contributor.author | Ambade, Rohan B. | - |
dc.contributor.author | Ahn, Hee Joon | - |
dc.contributor.author | Han, Sung-Hwan | - |
dc.contributor.author | Joo, Oh-Shim | - |
dc.date.accessioned | 2021-08-02T19:29:12Z | - |
dc.date.available | 2021-08-02T19:29:12Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27542 | - |
dc.description.abstract | Studies on optical and electrical conductivity in nitrogen (N)-doped ZnO shells are explored. On incorporating low levels of nitrogen, the (0 0 2) X-ray diffraction (XRD) peak was found to be intensified significantly. Closely packed spherical crystallites of ZnO were transformed into flat-flakes during 0.1-0.3 M nitrogen doping and finally to shells, flattered at the center and tapered at ends, at 0.4 M. Both pristine and N-doped ZnO films show hydrophilic character. It was also found that the degree of transparency and the nature of conductivity as estimated by optical absorbance and Hall measurement, respectively, were strongly influenced by the levels of N-doping. Higher nitrogen doping led to decline in electrical resistivity and mobility due to an enhancement of free charge carriers. Presence of both (N-2)o donor and (N)0 acceptor peaks in X-ray photoelectron spectroscopy could be responsible for the formation of higher carrier concentration in ZnO films. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Nitrogen-doped ZnO shells: Studies on optical transparency and electrical conductivity | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Hee Joon | - |
dc.identifier.doi | 10.1016/j.materresbull.2012.01.024 | - |
dc.identifier.scopusid | 2-s2.0-84859493688 | - |
dc.identifier.wosid | 000303485400024 | - |
dc.identifier.bibliographicCitation | MATERIALS RESEARCH BULLETIN, v.47, no.5, pp.1246 - 1250 | - |
dc.relation.isPartOf | MATERIALS RESEARCH BULLETIN | - |
dc.citation.title | MATERIALS RESEARCH BULLETIN | - |
dc.citation.volume | 47 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1246 | - |
dc.citation.endPage | 1250 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary | - |
dc.subject.keywordPlus | SPRAY-PYROLYSIS TECHNIQUE | - |
dc.subject.keywordPlus | NITRIDE THIN-FILMS | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | INDIUM OXIDE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Chemical synthesis | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Optical properties | - |
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