Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy
DC Field | Value | Language |
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dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Lee, Sejoon | - |
dc.contributor.author | Yoon, Im Taek | - |
dc.contributor.author | Jeon, H. C. | - |
dc.contributor.author | Lee, D. J. | - |
dc.contributor.author | Kang, T. W. | - |
dc.contributor.author | Song, J. D. | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Kim, D. Y. | - |
dc.contributor.author | Park, C. S. | - |
dc.date.accessioned | 2021-08-02T19:31:57Z | - |
dc.date.available | 2021-08-02T19:31:57Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27676 | - |
dc.description.abstract | The p-type InMnP: Be epilayers were prepared by the sequential growth of Mn/InP: Be bilayers using molecular-beam-epitaxy and the subsequent in-situ annealing at 200-300 degrees C. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InMnP. The ferromagnetic transition in InMnP: Be was observed to occur at the elevated temperature of similar to 140 K, and the ferromagnetic spin-domains clearly appeared in magnetic force microscopy images. The improved ferromagnetic properties are attributed to the increased p-d hybridation due to high p-type conductivity of InMnP: Be (p similar to 10(20) cm(-3)). The results suggest that enhanced ferromagnetism can be effectively obtained from Be-codoped InMnP. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660274] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong S. | - |
dc.identifier.doi | 10.1063/1.3660274 | - |
dc.identifier.scopusid | 2-s2.0-81155145972 | - |
dc.identifier.wosid | 000297030200038 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.19 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.citation.number | 19 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NEUTRAL MANGANESE ACCEPTOR | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | MN | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
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