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Electrical characteristics of indium gallium zinc oxide thin film transistors using hydrogen plasma treatment and annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-02T19:35:09Z | - |
| dc.date.available | 2021-08-02T19:35:09Z | - |
| dc.date.issued | 2018-07-11 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27898 | - |
| dc.title | Electrical characteristics of indium gallium zinc oxide thin film transistors using hydrogen plasma treatment and annealing | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 16th International Nanotech Symposium & Nano-Convergence Exhibition | - |
| dc.citation.conferencePlace | Kintex, Ilsan, Korea | - |
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