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Electrical characteristics of indium gallium zinc oxide thin film transistors using hydrogen plasma treatment and annealing

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dc.contributor.author이승백-
dc.date.accessioned2021-08-02T19:35:09Z-
dc.date.available2021-08-02T19:35:09Z-
dc.date.issued2018-07-11-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27898-
dc.titleElectrical characteristics of indium gallium zinc oxide thin film transistors using hydrogen plasma treatment and annealing-
dc.typeConference-
dc.citation.conferenceNameThe 16th International Nanotech Symposium & Nano-Convergence Exhibition-
dc.citation.conferencePlaceKintex, Ilsan, Korea-
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