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Quantitative Test of the Evolution of Geant4 Electron Backscattering Simulation

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dc.contributor.authorBasaglia, Tullio-
dc.contributor.authorHan, Min Cheol-
dc.contributor.authorHoff, Gabriela-
dc.contributor.authorKim, Chan Hyeong-
dc.contributor.authorKim, Sung Hun-
dc.contributor.authorPia, Maria Grazia-
dc.contributor.authorSaracco, Paolo-
dc.date.accessioned2021-07-30T05:04:51Z-
dc.date.available2021-07-30T05:04:51Z-
dc.date.created2021-05-12-
dc.date.issued2016-12-
dc.identifier.issn0018-9499-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2792-
dc.description.abstractEvolutions of Geant4 code have affected the simulation of electron backscattering with respect to previously published results. Their effects are quantified by analyzing the compatibility of the simulated electron backscattering fraction with a large collection of experimental data for a wide set of physics configuration options available in Geant4. Special emphasis is placed on two electron scattering implementations first released in Geant4 version 10.2: the Goudsmit-Saunderson multiple scattering model and a single Coulomb scattering model based on Mott cross section calculation. The new Goudsmit-Saunderson multiple scattering model appears to perform equally or less accurately than the model implemented in previous Geant4 versions, depending on the electron energy. The new Coulomb scattering model was flawed from a physics point of view, but computationally fast in Geant4 version 10.2; the physics correction released in Geant4 version 10.2p01 severely degrades its computational performance. Problems observed in electron backscattering simulation in previous publications have been addressed by evolutions in the Geant4 geometry domain.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleQuantitative Test of the Evolution of Geant4 Electron Backscattering Simulation-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Chan Hyeong-
dc.identifier.doi10.1109/TNS.2016.2617834-
dc.identifier.scopusid2-s2.0-85012866169-
dc.identifier.wosid000391693100015-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.63, no.6, pp.2849 - 2865-
dc.relation.isPartOfIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.titleIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.volume63-
dc.citation.number6-
dc.citation.startPage2849-
dc.citation.endPage2865-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.subject.keywordPlusGOODNESS-OF-FIT-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusTOOLKIT-
dc.subject.keywordPlusNUCLEI-
dc.subject.keywordAuthorElectrons-
dc.subject.keywordAuthorGeant4-
dc.subject.keywordAuthorMonte Carlo-
dc.subject.keywordAuthorsimulation-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7590007-
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