Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility
DC Field | Value | Language |
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dc.contributor.author | Xu, Xiaoqing | - |
dc.contributor.author | Zhong, Jiebin | - |
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Norvilas, Aras | - |
dc.contributor.author | Sommerhalter, Christof | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.contributor.author | Tang, Mary | - |
dc.date.accessioned | 2021-07-30T05:04:51Z | - |
dc.date.available | 2021-07-30T05:04:51Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2795 | - |
dc.description.abstract | In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1063/1.4967816 | - |
dc.identifier.scopusid | 2-s2.0-84994885244 | - |
dc.identifier.wosid | 000392082600024 | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.6, no.11, pp.1 - 7 | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4967816 | - |
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