A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays
DC Field | Value | Language |
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dc.contributor.author | Miller, Ruth A. | - |
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Chiamori, Heather C. | - |
dc.contributor.author | Suria, Ateeq J. | - |
dc.contributor.author | Chapin, Caitlin A. | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-07-30T05:04:52Z | - |
dc.date.available | 2021-07-30T05:04:52Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.issn | 0034-6748 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2802 | - |
dc.description.abstract | A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 x 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm x 1.35 mm) capable of determining incident light angles with a +/- 45 degrees field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0 degrees and 45 degrees was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1063/1.4962704 | - |
dc.identifier.scopusid | 2-s2.0-84988508680 | - |
dc.identifier.wosid | 000385634500061 | - |
dc.identifier.bibliographicCitation | REVIEW OF SCIENTIFIC INSTRUMENTS, v.87, no.9, pp.1 - 6 | - |
dc.relation.isPartOf | REVIEW OF SCIENTIFIC INSTRUMENTS | - |
dc.citation.title | REVIEW OF SCIENTIFIC INSTRUMENTS | - |
dc.citation.volume | 87 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-TEMPERATURE | - |
dc.subject.keywordPlus | MSM PHOTODETECTORS | - |
dc.subject.keywordPlus | CURRENT TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4962704 | - |
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