Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors
DC Field | Value | Language |
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dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Lim, Jongwoo | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-07-30T05:04:54Z | - |
dc.date.available | 2021-07-30T05:04:54Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 1530-437X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2812 | - |
dc.description.abstract | Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted in higher photodetector sensitivity (57.4% increase at room temperature and 139% at 200°C) compared with conventional designs on planar substrates due to the increased absorption of incident UV light (optical trapping). In addition, a 53% reduction in electrical resistance at room temperature and 27.3% at 200°C were observed due to the increased surface area. The decay time for the non-exponential persistent photoconductivity decreased significantly from 327 to 34 sec as the temperature increased from room temperature to 200°C as a result of the accelerated electron-hole pair recombination (generation) rate. These results support the use of textured AlGaN/GaN sensor platforms for UV detection in harsh environments (e.g., downhole, combustion, and space). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1109/JSEN.2016.2531181 | - |
dc.identifier.scopusid | 2-s2.0-84964402899 | - |
dc.identifier.wosid | 000374239600038 | - |
dc.identifier.bibliographicCitation | IEEE SENSORS JOURNAL, v.16, no.10, pp.3633 - 3639 | - |
dc.relation.isPartOf | IEEE SENSORS JOURNAL | - |
dc.citation.title | IEEE SENSORS JOURNAL | - |
dc.citation.volume | 16 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3633 | - |
dc.citation.endPage | 3639 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-I-N | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER DETECTORS | - |
dc.subject.keywordPlus | PERSISTENT PHOTOCONDUCTIVITY | - |
dc.subject.keywordPlus | PIEZOELECTRIC POLARIZATION | - |
dc.subject.keywordPlus | POWER-DENSITY | - |
dc.subject.keywordPlus | HIGH-SPEED | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | GAN/ALGAN | - |
dc.subject.keywordPlus | PHOTODIODES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | harsh environments | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | ultraviolet | - |
dc.subject.keywordAuthor | V-grooved surfaces | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7409926 | - |
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