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Cited 22 time in webofscience Cited 18 time in scopus
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Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

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dc.contributor.authorSo, Hongyun-
dc.contributor.authorSenesky, Debbie G.-
dc.date.accessioned2021-07-30T05:04:54Z-
dc.date.available2021-07-30T05:04:54Z-
dc.date.created2021-05-14-
dc.date.issued2016-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2814-
dc.description.abstractIn this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleLow-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces-
dc.typeArticle-
dc.contributor.affiliatedAuthorSo, Hongyun-
dc.identifier.doi10.1063/1.4939509-
dc.identifier.scopusid2-s2.0-84954103116-
dc.identifier.wosid000374313000032-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.108, no.1, pp.1 - 4-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume108-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.type.docType정기학술지(Article(Perspective Article포함))-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusPIEZOELECTRIC POLARIZATION-
dc.subject.keywordPlusHEMTS-
dc.subject.keywordPlusSI(111)-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusGAN/ALGAN-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusGANHFETS-
dc.subject.keywordPlusSTRESS-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4939509-
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