Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces
DC Field | Value | Language |
---|---|---|
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-07-30T05:04:54Z | - |
dc.date.available | 2021-07-30T05:04:54Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2814 | - |
dc.description.abstract | In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1063/1.4939509 | - |
dc.identifier.scopusid | 2-s2.0-84954103116 | - |
dc.identifier.wosid | 000374313000032 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.108, no.1, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 108 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PIEZOELECTRIC POLARIZATION | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | GAN/ALGAN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GANHFETS | - |
dc.subject.keywordPlus | STRESS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4939509 | - |
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