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Effect of grain size on the electrical characteristics of three-dimension NAND flash memory devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-02T19:55:57Z | - |
| dc.date.available | 2021-08-02T19:55:57Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2018-06-12 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/28418 | - |
| dc.publisher | Korea Nano Technology Research Society | - |
| dc.title | Effect of grain size on the electrical characteristics of three-dimension NAND flash memory devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | NANO KOREA 2018 | - |
| dc.relation.isPartOf | NANO KOREA 2018 | - |
| dc.citation.title | NANO KOREA 2018 | - |
| dc.citation.conferencePlace | 킨텍스 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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