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High performance memory device with vertical structures of MGr/hBN/WS2 layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-03T01:27:36Z | - |
| dc.date.available | 2021-08-03T01:27:36Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2017-07-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/31736 | - |
| dc.publisher | EDISON 20 Committee | - |
| dc.title | High performance memory device with vertical structures of MGr/hBN/WS2 layers | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON 20) | - |
| dc.relation.isPartOf | 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON 20) | - |
| dc.citation.title | 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON 20) | - |
| dc.citation.conferencePlace | Buffalo, New York | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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