Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces

Abstract

Highly antireflective heterostructured aluminum gallium nitride (AIGaN)/GaN ultraviolet (UV) photodetectors were demonstrated using a combination of inverted pyramidal surfaces and zinc oxide nanorod arrays (i.e., antireflective surface modification) to enhance the optical sensitivity. The microfabricated hierarchical surfaces significantly reduced the average surface reflectance to less than 0.3% in the UV region and less than 1% in the visible light region, allowing near-perfect absorption of incident light regardless of the angle of incidence (5-80°). As a result, the photodetectors fabricated on highly antireflective AlGaN/GaN surfaces showed higher sensitivity and responsivity over a broad range of incidence angles compared to photodetectors on planar AIGaN/GaN surfaces, supporting the use of a hierarchically modified sensing surface for omnidirectional UV monitoring with higher sensitivity.