Ultralow Voltage Driving Circuits Based on Coplanar a-InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric
DC Field | Value | Language |
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dc.contributor.author | Lee, Dayoon | - |
dc.contributor.author | Kim, Yongchan | - |
dc.contributor.author | Kim, So Young | - |
dc.contributor.author | Kim, Do Hwan | - |
dc.contributor.author | Lee, Hojin | - |
dc.date.accessioned | 2021-08-03T02:55:55Z | - |
dc.date.available | 2021-08-03T02:55:55Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/32815 | - |
dc.description.abstract | Coplanar amorphous indium gallium zinc oxide (a-InGaZnO) thin film transistors (TFTs) with photopatternable ionic polymer gate dielectrics are fabricated and their inverter/shift register circuits are demonstrated. As a gate dielectric, ionic-polyurethane acrylate (i-PUA) can be patterned as small as 20 mu m through conventional photolithography to achieve superior electrical properties at low operating voltages by the electric double layer formation, inducing ultrahigh channel capacitance. The fabricated solution-processed a-InGaZnO TFT with the i-PUA gate dielectric shows excellent electrical characteristics such as a field-effect mobility of 11.6 cm(2) V-1 s(-1), on-off ratio exceeding 10(7), and low threshold voltage of 0.3 V. It is also confirmed that the inverter and shift register can be fabricated based on the proposed coplanar a-InGaZnO TFTs and are successfully functional even at 60 Hz operating frequency with driving voltage levels below 3 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | Ultralow Voltage Driving Circuits Based on Coplanar a-InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Do Hwan | - |
dc.identifier.doi | 10.1002/aelm.201900359 | - |
dc.identifier.scopusid | 2-s2.0-85069851343 | - |
dc.identifier.wosid | 000477519400001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.5, no.10, pp.1 - 7 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | ELECTROLYTE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DRIVER | - |
dc.subject.keywordAuthor | coplanar structures | - |
dc.subject.keywordAuthor | electric double layer | - |
dc.subject.keywordAuthor | ionic polymer gate dielectric | - |
dc.subject.keywordAuthor | solution-processed a-InGaZnO | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.201900359 | - |
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