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Effect of Doping Concentration and Thickness on Latch-up Characteristics in Vertical Thyristor-based 1T-DRAM
- Authors
- 박재근
- Issue Date
- 19-Nov-2016
- Place
- Ramada Plaza Jeju Ocean Front Hotel
- Conference Name
- International Symposium on Mechanical Engineering and Material Science (ISMEMS 2016)
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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