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Effects of the single grain boundary on the electrical characteristics in 3D V-NAND flash memory devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T05:27:50Z | - |
| dc.date.available | 2021-08-03T05:27:50Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2016-11-10 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/34431 | - |
| dc.publisher | Mokpo National University | - |
| dc.title | Effects of the single grain boundary on the electrical characteristics in 3D V-NAND flash memory devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 14th International Conference on Nano Science and Nano Technology | - |
| dc.relation.isPartOf | The 14th International Conference on Nano Science and Nano Technology | - |
| dc.citation.title | The 14th International Conference on Nano Science and Nano Technology | - |
| dc.citation.conferencePlace | Mokpo National University | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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