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Effect of Doping Concentration on Latch-up Characteristics in Vertical Thyristor-based 1T-DRAM
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T05:53:14Z | - |
| dc.date.available | 2021-08-03T05:53:14Z | - |
| dc.date.issued | 2016-10-27 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/34838 | - |
| dc.title | Effect of Doping Concentration on Latch-up Characteristics in Vertical Thyristor-based 1T-DRAM | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Fall Conference of KSDT 2016 | - |
| dc.citation.conferencePlace | COEX Hall E3, E4 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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