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Enhancement of electrical characteristics for the vertical NAND flash memory devices due to the insertion of the nanoscale modified array structure
- Authors
- 김태환
- Issue Date
- 25-Aug-2016
- Publisher
- IUVSTA
- Citation
- 20th International Vacuum Congress
- Conference Name
- 20th International Vacuum Congress
- Place
- BUSAN, KOREA
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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