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Program/erase characteristic variations of the vertical NAND flash memory devices dependent on channel layer thickness
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T06:16:04Z | - |
| dc.date.available | 2021-08-03T06:16:04Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2016-07-13 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/35961 | - |
| dc.publisher | 나노기술연구협의회 | - |
| dc.title | Program/erase characteristic variations of the vertical NAND flash memory devices dependent on channel layer thickness | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea | - |
| dc.relation.isPartOf | The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea | - |
| dc.citation.title | The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea | - |
| dc.citation.conferencePlace | KINTEX, KOREA | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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