Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot: poly(methyl silsesquioxane) nanocomposites
DC Field | Value | Language |
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dc.contributor.author | Bok, Chang Han | - |
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-07-30T05:12:34Z | - |
dc.date.available | 2021-07-30T05:12:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3619 | - |
dc.description.abstract | Resistive switching memory devices were fabricated utilizing graphene quantum dot (GQD):poly(methyl silsesquioxane) (PMSSQ) hybrid nanocomposites. Current-voltage curves for the Al/GQD:PMSSQ/indium-tin-oxide devices at room temperature showed write-once-read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 106 due to the homogeneous dispersion of the GQDs in the PMSSQ matrix. The WORM devices maintained retention times larger than 2 × 104 s under ambient conditions. The devices showed high device-to-device reproducibility with threshold-voltage distributions between 3 and 5 V. The ON state currents remained between 10-6 and 10-3 A, and the OFF state currents maintained between 10-12 and 10-9 A. The operating mechanisms concerning the interaction between the GQDs and the PMSSQ matrix for the resistive-switch phenomenon were analyzed on the basis of the I-V results and with the aid of the energy band diagram. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot: poly(methyl silsesquioxane) nanocomposites | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.4973358 | - |
dc.identifier.scopusid | 2-s2.0-85008887061 | - |
dc.identifier.wosid | 000392834600041 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.110, no.1 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 110 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ORGANIC BISTABLE DEVICES | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | SHEETS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4973358 | - |
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