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Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application

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dc.contributor.authorKang, Shinyoung-
dc.contributor.authorLee, Juyoung-
dc.contributor.authorSong, Yun Heub-
dc.date.accessioned2021-07-30T05:13:24Z-
dc.date.available2021-07-30T05:13:24Z-
dc.date.created2021-05-11-
dc.date.issued2020-10-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3661-
dc.description.abstractIn this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-Term potentiation (LTP)/long-Term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleInvestigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application-
dc.typeArticle-
dc.contributor.affiliatedAuthorSong, Yun Heub-
dc.identifier.doi10.1109/ISOCC50952.2020.9332972-
dc.identifier.scopusid2-s2.0-85100765984-
dc.identifier.bibliographicCitationProceedings - International SoC Design Conference, ISOCC 2020, pp.169 - 170-
dc.relation.isPartOfProceedings - International SoC Design Conference, ISOCC 2020-
dc.citation.titleProceedings - International SoC Design Conference, ISOCC 2020-
dc.citation.startPage169-
dc.citation.endPage170-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusAntimony alloys-
dc.subject.keywordPlusGermanium compounds-
dc.subject.keywordPlusProgrammable logic controllers-
dc.subject.keywordPlusArtificial synapse-
dc.subject.keywordPlusBottom electrode contacts-
dc.subject.keywordPlusGe-Sb-Te alloys-
dc.subject.keywordPlusInterfacial phase-
dc.subject.keywordPlusLong-term potentiations-
dc.subject.keywordPlusParameter analyzer-
dc.subject.keywordPlusPhase change memory (pcm)-
dc.subject.keywordPlusSuperlattice structures-
dc.subject.keywordPlusPhase change memory-
dc.subject.keywordAuthorartificial synaptic device-
dc.subject.keywordAuthorinterfacial phase change memory-
dc.subject.keywordAuthorneuromorphic devices-
dc.subject.keywordAuthorphase change memory-
dc.subject.keywordAuthorsuperlattice-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9332972-
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