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Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Shinyoung | - |
| dc.contributor.author | Lee, Juyoung | - |
| dc.contributor.author | Song, Yun Heub | - |
| dc.date.accessioned | 2021-07-30T05:13:24Z | - |
| dc.date.available | 2021-07-30T05:13:24Z | - |
| dc.date.created | 2021-05-11 | - |
| dc.date.issued | 2020-10 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3661 | - |
| dc.description.abstract | In this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-Term potentiation (LTP)/long-Term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
| dc.identifier.doi | 10.1109/ISOCC50952.2020.9332972 | - |
| dc.identifier.scopusid | 2-s2.0-85100765984 | - |
| dc.identifier.bibliographicCitation | Proceedings - International SoC Design Conference, ISOCC 2020, pp.169 - 170 | - |
| dc.relation.isPartOf | Proceedings - International SoC Design Conference, ISOCC 2020 | - |
| dc.citation.title | Proceedings - International SoC Design Conference, ISOCC 2020 | - |
| dc.citation.startPage | 169 | - |
| dc.citation.endPage | 170 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Antimony alloys | - |
| dc.subject.keywordPlus | Germanium compounds | - |
| dc.subject.keywordPlus | Programmable logic controllers | - |
| dc.subject.keywordPlus | Artificial synapse | - |
| dc.subject.keywordPlus | Bottom electrode contacts | - |
| dc.subject.keywordPlus | Ge-Sb-Te alloys | - |
| dc.subject.keywordPlus | Interfacial phase | - |
| dc.subject.keywordPlus | Long-term potentiations | - |
| dc.subject.keywordPlus | Parameter analyzer | - |
| dc.subject.keywordPlus | Phase change memory (pcm) | - |
| dc.subject.keywordPlus | Superlattice structures | - |
| dc.subject.keywordPlus | Phase change memory | - |
| dc.subject.keywordAuthor | artificial synaptic device | - |
| dc.subject.keywordAuthor | interfacial phase change memory | - |
| dc.subject.keywordAuthor | neuromorphic devices | - |
| dc.subject.keywordAuthor | phase change memory | - |
| dc.subject.keywordAuthor | superlattice | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/9332972 | - |
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