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The enhancement of electrical characteristics of silicon based tunneling field-effect transistors with a buried cylindrical gate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T06:46:54Z | - |
| dc.date.available | 2021-08-03T06:46:54Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2015-12-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/37742 | - |
| dc.publisher | Applied Physics Division, Korean Physical Society | - |
| dc.title | The enhancement of electrical characteristics of silicon based tunneling field-effect transistors with a buried cylindrical gate | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 9th International Conference on Advanced Materials and Devices | - |
| dc.relation.isPartOf | The 9th International Conference on Advanced Materials and Devices | - |
| dc.citation.title | The 9th International Conference on Advanced Materials and Devices | - |
| dc.citation.conferencePlace | Jeju, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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