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The Characteristics of SiO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition using BTBAS precursor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T06:54:40Z | - |
| dc.date.available | 2021-08-03T06:54:40Z | - |
| dc.date.issued | 2015-11-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/37938 | - |
| dc.title | The Characteristics of SiO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition using BTBAS precursor | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2015년도 한국재료학회 추계학술대회 및 제 29회 신소재 심포지엄 | - |
| dc.citation.conferencePlace | 부산 해운대 그랜드호텔 | - |
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