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Gate Tunable Schottky Barriers in Few-layer Graphene/MoS2 Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-03T06:57:57Z | - |
| dc.date.available | 2021-08-03T06:57:57Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2015-11-13 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/38166 | - |
| dc.publisher | MNC2015 Organizing Committee | - |
| dc.title | Gate Tunable Schottky Barriers in Few-layer Graphene/MoS2 Transistors | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 28th Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.relation.isPartOf | 28th Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.citation.title | 28th Inter. Microprocesses and Nanotechnology Conf. | - |
| dc.citation.conferencePlace | Toyama, Japan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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