Energy transfer process in white organic light-emitting devices based on carbazole/thioxanthene-S, S-dioxide host materialopen access
- Authors
- Jeon, Young Pyo; Park, Dong Hyun; Yoo, Keon-Ho; Kim, Tae Whan
- Issue Date
- Jul-2018
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICAL MATERIALS EXPRESS, v.8, no.7, pp.1833 - 1840
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICAL MATERIALS EXPRESS
- Volume
- 8
- Number
- 7
- Start Page
- 1833
- End Page
- 1840
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3893
- DOI
- 10.1364/OME.8.001833
- ISSN
- 2159-3930
- Abstract
- Phosphorescent white organic light-emitting devices (Ph-WOLEDs) fabricated utilizing carbazole/thioxanthene-S, S-dioxide (EBCz-ThX) host material were investigated to enhance their efficiency by understanding the energy transfer process from the host to the dopant materials. Time-resolved photoluminescence (PL) spectra at room and low temperatures demonstrated that the energy transfer occurs between the EBCz-ThX host and the bis(2-benzo[b]thiophen-2-ylpyridine)(acetylacetonate)-iridium(III) (Ir(bt)(2)acac) orange dopant or the (bis(2-(4,6-difluorophenyl) pyridyl-N,C2') iridium(III) picolinate (FIrpic) blue dopant. The energy transfer process was inferred from the PL decay curves of Ir(bt)(2)acac doped EBCz-ThX with doping concentrations of 5, 10, and 20%. The quantum efficiency in the Ph-WOLEDs with 5% Ir(bt)(2)acac doped EBCz-ThX is the highest since its energy transfer process from EBCz-ThX to Ir(bt)(2)acac involves the charge transfer states and is most efficient. The quantum efficiency of the Ph-WOLEDs with 5% Ir(bt)(2)acac doped EBCz-ThX emission layers at 1,000 cd/m(2) showed the highest value of 10.2%, and the commission internationale de l'Eclairage (CIE) coordinates were (0.45, 0.46), indicative of the warm white emission.
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