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The diameter and doping profile of the Si nanowires dependent on electrical characteristics of the gate-all-around twin Si nanowire field effect transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T07:26:43Z | - |
| dc.date.available | 2021-08-03T07:26:43Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2015-07-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/39711 | - |
| dc.publisher | 나노기술연구협의회, 나노융합산업연구조합 | - |
| dc.title | The diameter and doping profile of the Si nanowires dependent on electrical characteristics of the gate-all-around twin Si nanowire field effect transistors | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 13th International Nanotech Symposium & Nano-Convergence Expo, NANO KOREA(2015) | - |
| dc.relation.isPartOf | The 13th International Nanotech Symposium & Nano-Convergence Expo, NANO KOREA(2015) | - |
| dc.citation.title | The 13th International Nanotech Symposium & Nano-Convergence Expo, NANO KOREA(2015) | - |
| dc.citation.conferencePlace | Coex, Seoul, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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