Control of Tungsten Protrusion with Surface Active Agent during Tungsten Chemical Mechanical Polishing
DC Field | Value | Language |
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dc.contributor.author | You, Keungtae | - |
dc.contributor.author | Seo, Jihoon | - |
dc.contributor.author | Kim, Patrick Joo Hyun | - |
dc.contributor.author | Song, Taeseup | - |
dc.date.accessioned | 2021-07-30T05:17:22Z | - |
dc.date.available | 2021-07-30T05:17:22Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3999 | - |
dc.description.abstract | With shrinkage of the minimum feature size to sub-14 nm, protrusion/dishing issues in chemical mechanical planarization (CMP) processes have become increasingly important to address. In this study, we propose an advanced slurry formulation with a surface active agent to prevent W protrusion during the W CMP process. In the presence of surface active agent, blanket removal rates on both W and SiO2 films showed non-Prestonian behavior at a low threshold pressure, which is explained by adsorption characteristics of the surface active agent on the films. To study the effect of the surface active agent on W protrusion, W-patterned wafers were polished at the threshold pressure. As the concentration of the surface active agent increased from 0 to 12 mM, W protrusion from patterns with line/space widths of 0.5 μm/0.5 μm decreased significantly from 186 to 30 Å. The mechanism on the significant decrease in W protrusion behavior in the presence of the surface active agent is discussed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Control of Tungsten Protrusion with Surface Active Agent during Tungsten Chemical Mechanical Polishing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Taeseup | - |
dc.identifier.doi | 10.1149/2.0151712jss | - |
dc.identifier.scopusid | 2-s2.0-85047134304 | - |
dc.identifier.wosid | 000419175500020 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.12, pp.P822 - P827 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 6 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | P822 | - |
dc.citation.endPage | P827 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICA NANOPARTICLES | - |
dc.subject.keywordPlus | CMP | - |
dc.subject.keywordPlus | SLURRY | - |
dc.subject.keywordPlus | PLANARIZATION | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | ACID | - |
dc.subject.keywordPlus | SIZE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.0151712jss | - |
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