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4원소 나노입자를 포함한 poly-4-vinyl-phenol 유전층을 사용하여 제작한 유기 플로팅 게이트 메모리 소자의 전기적 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T08:12:07Z | - |
| dc.date.available | 2021-08-03T08:12:07Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2015-02-09 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/41146 | - |
| dc.publisher | The Korean Vacuum Society | - |
| dc.title | 4원소 나노입자를 포함한 poly-4-vinyl-phenol 유전층을 사용하여 제작한 유기 플로팅 게이트 메모리 소자의 전기적 특성 | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 48th Winter Annual Conference of the Korean Vacuum Society | - |
| dc.relation.isPartOf | The 48th Winter Annual Conference of the Korean Vacuum Society | - |
| dc.citation.title | The 48th Winter Annual Conference of the Korean Vacuum Society | - |
| dc.citation.conferencePlace | 웰리힐리파크(강원도 횡성) | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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