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Effect of the interface roughness of the high-k dielectric layer on the electron mobility in the channel of the MOSFETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T08:20:24Z | - |
| dc.date.available | 2021-08-03T08:20:24Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2014-12-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/41572 | - |
| dc.publisher | The Semiconductor Physics Division, The Korean Physical Society | - |
| dc.title | Effect of the interface roughness of the high-k dielectric layer on the electron mobility in the channel of the MOSFETs | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 17th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.relation.isPartOf | The 17th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.citation.title | The 17th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.citation.conferencePlace | Ramada Plaza Jeju Hotel, Jeju, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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