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Electrical and optical properties of double layered oxide quantum dots embedded in ZnO layer for memory device application

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T08:47:42Z-
dc.date.available2021-08-03T08:47:42Z-
dc.date.created2021-06-30-
dc.date.issued2014-11-06-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/42174-
dc.publisherMNC2014 Organizing Committee-
dc.titleElectrical and optical properties of double layered oxide quantum dots embedded in ZnO layer for memory device application-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation27th Inter. Microprocesses and Nanotechnology Conf.-
dc.relation.isPartOf27th Inter. Microprocesses and Nanotechnology Conf.-
dc.citation.title27th Inter. Microprocesses and Nanotechnology Conf.-
dc.citation.conferencePlaceFukuoka, Japan-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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