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Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T08:49:28Z | - |
| dc.date.available | 2021-08-03T08:49:28Z | - |
| dc.date.issued | 2014-10-31 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/42350 | - |
| dc.title | Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 1st symposium for International Advanced Functional Materials & Devices | - |
| dc.citation.conferencePlace | SUMCO Kyushu Factory (Imari) | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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