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Effects of Vpass and Vertical Pitch on 3D SONOS NAND Falsh Memory Operations

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dc.contributor.author이승백-
dc.date.accessioned2021-08-03T08:50:13Z-
dc.date.available2021-08-03T08:50:13Z-
dc.date.issued2014-10-27-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/42425-
dc.titleEffects of Vpass and Vertical Pitch on 3D SONOS NAND Falsh Memory Operations-
dc.typeConference-
dc.citation.conferenceNameThe 14th Non-volatile memory technology symposium-
dc.citation.conferencePlaceJeju, Korea-
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