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높은 유전율을 가지는 절연층으로 인한 MOSFET 소자에서의 전하 이동도 감소 연구

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dc.contributor.author김태환-
dc.date.accessioned2021-08-03T09:34:21Z-
dc.date.available2021-08-03T09:34:21Z-
dc.date.created2021-06-30-
dc.date.issued2014-08-18-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/43400-
dc.publisher한국진공학회-
dc.title높은 유전율을 가지는 절연층으로 인한 MOSFET 소자에서의 전하 이동도 감소 연구-
dc.typeConference-
dc.contributor.affiliatedAuthor김태환-
dc.identifier.bibliographicCitationThe 47th Summer Annual Conference of the Korean Vacuum Society-
dc.relation.isPartOfThe 47th Summer Annual Conference of the Korean Vacuum Society-
dc.citation.titleThe 47th Summer Annual Conference of the Korean Vacuum Society-
dc.citation.conferencePlace델피노리조트, 강원도 설악, Korea-
dc.type.rimsCONF-
dc.description.journalClass2-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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