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Correlation between Dark Currents and Defects in InAs/GaAs Quantum Dot Solar Cell Grown by Molecular Beam Epitaxy

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T09:34:39Z-
dc.date.available2021-08-03T09:34:39Z-
dc.date.created2021-06-30-
dc.date.issued2014-08-12-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/43432-
dc.publisherICPS 2014 Organizing Committee-
dc.titleCorrelation between Dark Currents and Defects in InAs/GaAs Quantum Dot Solar Cell Grown by Molecular Beam Epitaxy-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation32nd Inter. Conf. on the Physics of Semiconductors-
dc.relation.isPartOf32nd Inter. Conf. on the Physics of Semiconductors-
dc.citation.title32nd Inter. Conf. on the Physics of Semiconductors-
dc.citation.conferencePlaceTexas, USA-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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