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Electrical Bistabilities and Switching Mechanisms of Resistive Switching Memory Devices Fabricated Utilizing Ga and Sn Co-doped Zno Films
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T09:36:32Z | - |
| dc.date.available | 2021-08-03T09:36:32Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2014-07-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/43627 | - |
| dc.publisher | The Korea Vacuum Society | - |
| dc.title | Electrical Bistabilities and Switching Mechanisms of Resistive Switching Memory Devices Fabricated Utilizing Ga and Sn Co-doped Zno Films | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | International Conference on Microelectronics and Plasma Technology 2014 | - |
| dc.relation.isPartOf | International Conference on Microelectronics and Plasma Technology 2014 | - |
| dc.citation.title | International Conference on Microelectronics and Plasma Technology 2014 | - |
| dc.citation.conferencePlace | Gunsan, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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