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Analysis of new interconnection covering top metallization layer for 650V GaN e-HEMT power modules
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seong, J. | - |
| dc.contributor.author | Kim, M.K. | - |
| dc.contributor.author | Yoon, S.W. | - |
| dc.date.accessioned | 2021-07-30T05:22:48Z | - |
| dc.date.available | 2021-07-30T05:22:48Z | - |
| dc.date.issued | 2020-00 | - |
| dc.identifier.issn | 2191-3358 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4469 | - |
| dc.description.abstract | This paper presents a new interconnection design for power modules. The interconnection has a shape d contact to be fit with the top metal of power semiconductors and is especially designed for GaN e-HE MT devices having a unique top-side metallization layer design and lateral conduction channel. This interconnection can reduce parasitic inductance/resistance and mitigate current density and thermal concentration in power modules. These advantages are validated by finite element method (FEM) simulations. In addition, to accommodate manufacturing inconvenience, an adjusted interconnection shape is al so analyzed. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Analysis of new interconnection covering top metallization layer for 650V GaN e-HEMT power modules | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85089688586 | - |
| dc.identifier.bibliographicCitation | PCIM Europe Conference Proceedings, v.1, pp 1958 - 1963 | - |
| dc.citation.title | PCIM Europe Conference Proceedings | - |
| dc.citation.volume | 1 | - |
| dc.citation.startPage | 1958 | - |
| dc.citation.endPage | 1963 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Energy management | - |
| dc.subject.keywordPlus | Gallium nitride | - |
| dc.subject.keywordPlus | III-V semiconductors | - |
| dc.subject.keywordPlus | Integrated circuit interconnects | - |
| dc.subject.keywordPlus | Intelligent robots | - |
| dc.subject.keywordPlus | Metallizing | - |
| dc.subject.keywordPlus | Power HEMT | - |
| dc.subject.keywordPlus | Semiconducting gallium compounds | - |
| dc.subject.keywordPlus | Wide band gap semiconductors | - |
| dc.subject.keywordPlus | Conduction channel | - |
| dc.subject.keywordPlus | Finite element method simulation | - |
| dc.subject.keywordPlus | Interconnection design | - |
| dc.subject.keywordPlus | Metallization layers | - |
| dc.subject.keywordPlus | Parasitic inductances | - |
| dc.subject.keywordPlus | Power module | - |
| dc.subject.keywordPlus | Power semiconductors | - |
| dc.subject.keywordPlus | Thermal concentration | - |
| dc.subject.keywordPlus | Electric power system interconnection | - |
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