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Resistive Switching Memory Device Consisted of Au Quantum Dots Embedded in SiO2 on Single Graphene Layer

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T10:33:29Z-
dc.date.available2021-08-03T10:33:29Z-
dc.date.created2021-06-30-
dc.date.issued2014-04-14-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/44829-
dc.publisherIEEE-NEMS 2014 Organizing Committee-
dc.titleResistive Switching Memory Device Consisted of Au Quantum Dots Embedded in SiO2 on Single Graphene Layer-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems-
dc.relation.isPartOf9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems-
dc.citation.title9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems-
dc.citation.conferencePlaceHawaii, USA-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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