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Resistive Switching Memory Device Consisted of Au Quantum Dots Embedded in SiO2 on Single Graphene Layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-03T10:33:29Z | - |
| dc.date.available | 2021-08-03T10:33:29Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2014-04-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/44829 | - |
| dc.publisher | IEEE-NEMS 2014 Organizing Committee | - |
| dc.title | Resistive Switching Memory Device Consisted of Au Quantum Dots Embedded in SiO2 on Single Graphene Layer | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems | - |
| dc.relation.isPartOf | 9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems | - |
| dc.citation.title | 9th IEEE Inter. Conf. on Nano/Micro Engineered and Molecular Systems | - |
| dc.citation.conferencePlace | Hawaii, USA | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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