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Ohmic Contact Properties of Nonpolar GaN Grown on r-plane Sapphire Substrate with different Miscut Angle
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진섭 | - |
| dc.date.accessioned | 2021-08-03T10:48:20Z | - |
| dc.date.available | 2021-08-03T10:48:20Z | - |
| dc.date.issued | 2014-02-10 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45285 | - |
| dc.title | Ohmic Contact Properties of Nonpolar GaN Grown on r-plane Sapphire Substrate with different Miscut Angle | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제46회 한국진공학회 | - |
| dc.citation.conferencePlace | 강원도 평창 휘닉스 파크 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)