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Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Toan, Nguyen Van | - |
| dc.contributor.author | Zhao, Dong | - |
| dc.contributor.author | Inomata, Naoki | - |
| dc.contributor.author | Toda, Masaya | - |
| dc.contributor.author | Song, Yun Heub | - |
| dc.contributor.author | Ono, Takahito | - |
| dc.date.accessioned | 2021-07-30T05:23:03Z | - |
| dc.date.available | 2021-07-30T05:23:03Z | - |
| dc.date.issued | 2019-06 | - |
| dc.identifier.issn | 2167-0013 | - |
| dc.identifier.issn | 2167-0021 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4557 | - |
| dc.description.abstract | NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1109/TRANSDUCERS.2019.8808313 | - |
| dc.identifier.scopusid | 2-s2.0-85071926204 | - |
| dc.identifier.wosid | 000539487000432 | - |
| dc.identifier.bibliographicCitation | International Solid-State Sensors, Actuators and Microsystems Conference, pp 1709 - 1711 | - |
| dc.citation.title | International Solid-State Sensors, Actuators and Microsystems Conference | - |
| dc.citation.startPage | 1709 | - |
| dc.citation.endPage | 1711 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Instruments & Instrumentation | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
| dc.subject.keywordPlus | SWITCHES | - |
| dc.subject.keywordPlus | Actuators | - |
| dc.subject.keywordPlus | Aspect ratio | - |
| dc.subject.keywordPlus | Chemical vapor deposition | - |
| dc.subject.keywordPlus | Microsystems | - |
| dc.subject.keywordPlus | NAND circuits | - |
| dc.subject.keywordPlus | Electrostatically driven | - |
| dc.subject.keywordPlus | High aspect ratio | - |
| dc.subject.keywordPlus | Logical gates | - |
| dc.subject.keywordPlus | Mechanical logic | - |
| dc.subject.keywordPlus | NAND | - |
| dc.subject.keywordPlus | Nano-electromechanical | - |
| dc.subject.keywordPlus | Nanoelectromechanical switches | - |
| dc.subject.keywordPlus | Silicon structures | - |
| dc.subject.keywordPlus | Solid-state sensors | - |
| dc.subject.keywordAuthor | Logical gates | - |
| dc.subject.keywordAuthor | NAND | - |
| dc.subject.keywordAuthor | nanoelectromechanical switches | - |
| dc.subject.keywordAuthor | NOR | - |
| dc.subject.keywordAuthor | selective chemical vapor deposition | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8808313 | - |
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)