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Novel current-mirror based time dependent sense scheme for MLC PRAM

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dc.contributor.authorChoi, Jun-Tae-
dc.contributor.authorKweon, Jun-Young-
dc.contributor.authorSong, YunHeub-
dc.contributor.authorKim, Tony Tae-Hyoung-
dc.date.accessioned2021-07-30T05:23:08Z-
dc.date.available2021-07-30T05:23:08Z-
dc.date.created2021-05-11-
dc.date.issued2019-05-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4584-
dc.description.abstractVarious sensing schemes and sense amplifiers have been reported for PRAM. The resistance variation characteristics of PCM and OTS brings significant effects on the sensing schemes during read operation. This paper introduces a novel Current mirror based sensing scheme for PRAM. The developed sensing scheme can minimize the effect of resistance variation and reduces read error or failure. This can be a new method to enhance the.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleNovel current-mirror based time dependent sense scheme for MLC PRAM-
dc.typeArticle-
dc.contributor.affiliatedAuthorSong, YunHeub-
dc.identifier.doi10.23919/ELINFOCOM.2019.8706451-
dc.identifier.scopusid2-s2.0-85065891566-
dc.identifier.wosid000470015800152-
dc.identifier.bibliographicCitationICEIC 2019 - International Conference on Electronics, Information, and Communication, pp.595 - 597-
dc.relation.isPartOfICEIC 2019 - International Conference on Electronics, Information, and Communication-
dc.citation.titleICEIC 2019 - International Conference on Electronics, Information, and Communication-
dc.citation.startPage595-
dc.citation.endPage597-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaComputer Science-
dc.relation.journalResearchAreaTelecommunications-
dc.relation.journalWebOfScienceCategoryComputer Science, Information Systems-
dc.relation.journalWebOfScienceCategoryTelecommunications-
dc.subject.keywordPlusElectronics engineering-
dc.subject.keywordPlusElectronics industry-
dc.subject.keywordPlusCurrent mirrors-
dc.subject.keywordPlusMLC PRAM-
dc.subject.keywordPlusPRAM-
dc.subject.keywordPlusRead operation-
dc.subject.keywordPlusResistance variations-
dc.subject.keywordPlusSense amplifier-
dc.subject.keywordPlusSensing schemes-
dc.subject.keywordPlusTime dependent-
dc.subject.keywordPlusMirrors-
dc.subject.keywordPlusPHASE-CHANGE MEMORY-
dc.subject.keywordAuthorMLC PRAM-
dc.subject.keywordAuthorPRAM-
dc.subject.keywordAuthorSense Amplifier-
dc.subject.keywordAuthorSensing Scheme-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8706451-
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