Detailed Information
Cited 0 time in 
Cited 3 time in 
Cited 3 time in
Metadata Downloads
Development of PCM and OTS Macro-models for HSPICE Compatible Simulation
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi,Jun tae | - |
| dc.contributor.author | An, Byung kwon | - |
| dc.contributor.author | Kim, Tony Tae-Hyoung | - |
| dc.contributor.author | Song, Yun Heub | - |
| dc.date.accessioned | 2021-07-30T05:24:21Z | - |
| dc.date.available | 2021-07-30T05:24:21Z | - |
| dc.date.created | 2021-05-11 | - |
| dc.date.issued | 2019-03 | - |
| dc.identifier.issn | 0000-0000 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4608 | - |
| dc.description.abstract | PRAMs with PCM and OTS have been reported and applied for the crossbar array structure. The characteristics of PCM and OTS have significant effects on the PRAM operation. This paper introduces a novel PCM and OTS macro-model based on the physical mechanisms of them. The developed macro-model includes several intermediate states of PCM and OTS occurring during memory operation. This allows designers to understand the device behavior accurately and design more reliable PRAM after considering various device effects. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Development of PCM and OTS Macro-models for HSPICE Compatible Simulation | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
| dc.identifier.doi | 10.1109/EDTM.2019.8731191 | - |
| dc.identifier.scopusid | 2-s2.0-85067803875 | - |
| dc.identifier.bibliographicCitation | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, pp.463 - 465 | - |
| dc.relation.isPartOf | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | - |
| dc.citation.title | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | - |
| dc.citation.startPage | 463 | - |
| dc.citation.endPage | 465 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Electron devices | - |
| dc.subject.keywordPlus | Manufacture | - |
| dc.subject.keywordPlus | Pulse code modulation | - |
| dc.subject.keywordPlus | Crossbar arrays | - |
| dc.subject.keywordPlus | Intermediate state | - |
| dc.subject.keywordPlus | Macro model | - |
| dc.subject.keywordPlus | Memory operations | - |
| dc.subject.keywordPlus | Physical mechanism | - |
| dc.subject.keywordPlus | PRAM | - |
| dc.subject.keywordPlus | SPICE | - |
| dc.subject.keywordAuthor | Macro-model | - |
| dc.subject.keywordAuthor | OTS | - |
| dc.subject.keywordAuthor | PCM | - |
| dc.subject.keywordAuthor | PRAM | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8731191 | - |
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)