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Bidirectional Two-Terminal Switching Device using GaAs for Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 송윤흡 | - |
| dc.date.accessioned | 2021-08-03T11:21:18Z | - |
| dc.date.available | 2021-08-03T11:21:18Z | - |
| dc.date.issued | 2013-11-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/46139 | - |
| dc.title | Bidirectional Two-Terminal Switching Device using GaAs for Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 14th International Conference on Computers, Communications and Systems | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)