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Origin of Insulating Ground State of In/Si(111) and Sn/Ge(111)

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dc.contributor.author조준형-
dc.date.accessioned2021-08-03T11:32:49Z-
dc.date.available2021-08-03T11:32:49Z-
dc.date.issued2013-10-31-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/46231-
dc.titleOrigin of Insulating Ground State of In/Si(111) and Sn/Ge(111)-
dc.typeConference-
dc.citation.conferenceName2013년 가을학술논문발표회 및 임시총회-
dc.citation.conferencePlace창원컨벤션센터-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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