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Defect States in GaAs Solar Cells Grown at Various Growth Temperatures by Molecular Beam Epitaxy

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dc.contributor.author김은규-
dc.date.accessioned2021-08-03T11:32:50Z-
dc.date.available2021-08-03T11:32:50Z-
dc.date.created2021-06-30-
dc.date.issued2013-10-31-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/46233-
dc.publisherPVSEC-23 committee-
dc.titleDefect States in GaAs Solar Cells Grown at Various Growth Temperatures by Molecular Beam Epitaxy-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation23rd Inter. Photovoltaic Science and Engineering Conference (PVSEC-23)-
dc.relation.isPartOf23rd Inter. Photovoltaic Science and Engineering Conference (PVSEC-23)-
dc.citation.title23rd Inter. Photovoltaic Science and Engineering Conference (PVSEC-23)-
dc.citation.conferencePlaceTaipei, Taiwan-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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