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Conductive Bridging Random Access Memory Cell Fabricated with Top Ag Electrode, Polyethylene Oxide Layer, and Bottom Pt Electrode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T11:33:26Z | - |
| dc.date.available | 2021-08-03T11:33:26Z | - |
| dc.date.issued | 2013-10-30 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/46302 | - |
| dc.title | Conductive Bridging Random Access Memory Cell Fabricated with Top Ag Electrode, Polyethylene Oxide Layer, and Bottom Pt Electrode | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 224th ECS Meeting | - |
| dc.citation.conferencePlace | Hilton San Francisco | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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